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Proceedings Paper

Expanding the applications of computational lithography and inspection (CLI) in mask inspection, metrology, review, and repair
Author(s): Linyong Pang; Danping Peng; Peter Hu; Dongxue Chen; Lin He; Ying Li; Chris Clifford; Vikram Tolani
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Paper Abstract

Mask manufacturers will be impacted by two significant technology requirements at 22nm and below: The first is more extensive use of resolution enhancement technologies (RET), such as OPC or Inverse Lithography Technology (ILT), and Source Mask Optimization (SMO); the second is EUV technology. Both will create difficulties for mask inspection, defect disposition, metrology, review, and repair. For example, the use of ILT and SMO significantly increases mask complexity, making mask defect disposition more challenging than ever. EUV actinic inspection and AIMSTM will not be available for at least a few years, which makes EUV defect inspection and disposition more difficult, particularly regarding multilayer defects. Computational Lithography and Inspection (CLI), which has broad applications in mask inspection, metrology, review, and repair, has become essential to fill this technology gap. In this paper, several such CLI applications are presented and discussed.

Paper Details

Date Published: 20 April 2011
PDF: 21 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79712A (20 April 2011); doi: 10.1117/12.879535
Show Author Affiliations
Linyong Pang, Luminescent Technologies, Inc. (United States)
Danping Peng, Luminescent Technologies, Inc. (United States)
Peter Hu, Luminescent Technologies, Inc. (United States)
Dongxue Chen, Luminescent Technologies, Inc. (United States)
Lin He, Luminescent Technologies, Inc. (United States)
Ying Li, Luminescent Technologies, Inc. (United States)
Chris Clifford, Luminescent Technologies, Inc. (United States)
Vikram Tolani, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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