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Proceedings Paper

Development of EUV resist for 22nm half pitch and beyond
Author(s): Kouta Nishino; Ken Maruyama; Tooru Kimura; Toshiyuki Kai; Kentaro Goto; Shalini Sharma
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Paper Abstract

Extreme ultraviolet (EUV) lithography is one of the most promising candidates for next generation lithography (NGL) that can print 22nmhp and beyond. In order to implement EUV technology, resist is one of the critical items that require significant improvement in overall performance. In order to achieve these improvements, many research groups are developing new materials such as molecular glass (MG) polymer bound photo-acid generator (PAG) high quantum yield PAG, sensitizer and high absorption resin. In this study, we focused on innovative PAG materials and correlated PAG acid diffusion length to lithography performance. As a result, new resist designs with improved resolution, LWR, sensitivity are reported.

Paper Details

Date Published: 8 April 2011
PDF: 6 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692I (8 April 2011); doi: 10.1117/12.879430
Show Author Affiliations
Kouta Nishino, JSR Corp. (Japan)
Ken Maruyama, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)
Toshiyuki Kai, JSR Corp. (Japan)
Kentaro Goto, JSR Micro, Inc. (United States)
Shalini Sharma, JSR Micro, Inc. (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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