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Proceedings Paper

eMET: 50 keV electron multibeam mask exposure tool
Author(s): Christof Klein; Jan Klikovits; Hans Loeschner; Elmar Platzgummer
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Paper Abstract

Basic concept and targeted throughput values for IMS Nanofabrication's 50keV electron multibeam Mask Exposure Tool called eMET are outlined and detailed specifications of an eMET Proof-of-Concept Tool are presented. Recent results as obtained with electron and ion multi-beam projection test systems are described and compared with exposure simulations. Exposures were concentrated on ILT as well as OPC test patterns. Good agreement between test system exposures and simulation results is shown proving the accuracy of the theoretical predictions. Aerial image simulations for eMET demonstrate its capability to fully resolve complex patterns down to the 8 nm mask technology node.

Paper Details

Date Published: 2 April 2011
PDF: 6 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700C (2 April 2011); doi: 10.1117/12.879419
Show Author Affiliations
Christof Klein, IMS Nanofabrication AG (Austria)
Jan Klikovits, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)
Elmar Platzgummer, IMS Nanofabrication AG (Austria)

Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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