
Proceedings Paper
A simple modeling of carbon contamination on EUV exposure tools based on contamination experiments with synchrotron sourceFormat | Member Price | Non-Member Price |
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Paper Abstract
Contamination control of optics is one of critical issues for extreme ultraviolet (EUV) lithography. EUV irradiation
under a carbon-containing environment causes carbon contaminations on mirror surfaces. We investigated irradiance
dependency of contaminating rates of some contaminants using a synchrotron radiation of Saga Light Source (SAGALS).
Decane's contaminating rate increased proportionally with irradiance, while perfluorohexane's contaminating rate
was almost constant at a higher irradiance than 10 mW/cm2. We then introduced a simple model: contamination reaction
occurs when photons are supplied onto contaminants which are supplied and adsorbed on mirrors, and the lesser of their
supplying rates determines the contaminating rate. At a lower irradiance, since contaminants are sufficiently supplied,
the photon supply determines the contaminating rate. At a higher irradiance, since photons are sufficiently supplied, the
contaminant supply determines the contaminating rate, which is independent of irradiance and depends on contaminant's
partial pressure. We also investigated irradiance dependency of cleaning rates of carbon contamination by oxidative gas
and incorporated it into the model. We applied the contamination/cleaning model to an existing exposure tool, EUV1.
The transmittance degradation history agreed well with the calculation.
Paper Details
Date Published: 5 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690N (5 April 2011); doi: 10.1117/12.879392
Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690N (5 April 2011); doi: 10.1117/12.879392
Show Author Affiliations
Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)
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