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Proceedings Paper

New 0.75 NA ArF scanning lithographic tool
Author(s): Lifeng Duan; Jianrui Cheng; Gang Sun; Yonghui Chen
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Paper Abstract

A new company in the lithography world, SMEE has developed and produced a prototype wafer exposure tool, with an ArF laser light source. This tool, SMEE SSA600/10, adopted step and scan technology to obtain a large exposure filed and to average optical aberrations for a scanned image to improve CD uniformity and reduce distortion. The maximum numerical aperture is 0.75 and the maximum coherence factor of illumination system is 0.88. The illuminator provides continuously variable conventional and off-axis illumination modes to improve resolution. In this paper, the configuration of the exposure tool is presented and design concepts of the scanner are introduced. We show actual test data such as synchronization accuracy, focus and leveling repeatability, dynamic imaging performance (resolution, depth of focus) and overlay.

Paper Details

Date Published: 22 March 2011
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (22 March 2011); doi: 10.1117/12.879376
Show Author Affiliations
Lifeng Duan, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Jianrui Cheng, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Gang Sun, Shanghai Micro Electronics Equipment Co., Ltd. (China)
Yonghui Chen, Shanghai Micro Electronics Equipment Co., Ltd. (China)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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