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Proceedings Paper

LWR improvement in EUV resist process
Author(s): Chawon Koh; Hyun-Woo Kim; Sumin Kim; Hai-Sub Na; Chang-Min Park; Cheolhong Park; Kyoung-Yong Cho
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. The roughness of both the resist sidewall (line width roughness [LWR]) and resist top must be overcome soon for EUVL to be implemented. Currently, LWR can vary by about 1 nm according to the recipe used. We have characterized two promising techniques to improve LWR, an EUV rinse/TBAH process and an implant process, and demonstrated their efficacy. After cleaning inspection (ACI), LWR was improved with both the rinse and implant processes. After development inspection (ADI), LWR improved (0.12 nm, 2.4%) and ACI LWR improved (0.1 nm, 2.0% improvement) after using the EUV rinse process. ADI and ACI LWR improvement (0.45 nm, 9.1%, and 0.3 nm, 6.9%, respectively) was demonstrated with the EUV rinse/TBAH process. ADI LWR improvement (0.5 nm, 8.1%) and ACI LWR improvement (-0.5 nm, -16.9%) were characterized with the implant process. Critical dimension (CD) showed similar changes through pitch after the EUV rinse or TBAH process, but the degree of change depended on the initial pattern size giving CD difference of 2 nm between 30 nm HP and 50 nm HP after the implant process. For this technique, the dependence of CD change on pattern size must be minimized. Further extensive studies with rinse or implant are strongly encouraged for continued LWR improvement and real process implementation in EUVL. Demonstrating <2.2 nm LWR after pattern transfer is important in EUVL and needs to be pursued using various technical approaches. Initial resist LWR is important in assessing LWR improvements with additional process techniques. An initial EUV LWR < ~5.0 nm is required to properly assess the validity of the technique. Further study is required to improve ADI LWR and maintain better LWR after etch with advanced EUV rinse materials. Defects also need to be confirmed following the EUV rinse and TBAH developer. Further developing the implant process should focus on LWR improvement at low frequencies and optimization of process conditions to maintain the EUV resist profile and resist height. The dependence of CD change on pattern size likewise needs to be minimized.

Paper Details

Date Published: 7 April 2011
PDF: 8 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796918 (7 April 2011); doi: 10.1117/12.879334
Show Author Affiliations
Chawon Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyun-Woo Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sumin Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hai-Sub Na, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chang-Min Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Cheolhong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyoung-Yong Cho, SEMATECH (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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