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Proceedings Paper

Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images
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Paper Abstract

The chemical reactions induced in chemically amplified resists using a molecular glass resist (the seventh Selete Standard Resist, SSR7) were investigated. Two-dimensional (half-pitch and exposure dose) matrices of resist line width and line edge roughness (LER) and the remaining resist thickness were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The line width, LER, and remaining resist thickness were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The chemistry of SSR7 was discussed.

Paper Details

Date Published: 15 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720U (15 April 2011); doi: 10.1117/12.879331
Show Author Affiliations
Takahiro Kozawa, Osaka Univ. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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