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Proceedings Paper

Development of EUV lithography tools at Nikon
Author(s): Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Hiroshi Chiba; Kazushi Nomura; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo
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Paper Abstract

Exposure performance of projection optics with different flare level was compared in EUV1. Ultimate resolution of EUV1 was evaluated using alternate phase shift mask and resist modulation was obtained down to 16nmL/S. Modeling of carbon contamination growth and cleaning was established based on exposure experiments using a synchrotron source. Based on the modeling, in-situ cleaning condition using oxygen in EUV1 was optimized. As a result, carbon contamination growth in EUV1 was completely suppressed. Optical design of projection optics with numerical aperture of over 0.4 was investigated. 6-mirror system with central obscuration seems to be promising. EUV actinic wavefront metrology scheme without using a synchrotron source, which can be used as on-body wavefront metrology, was developed and its practicality was demonstrated.

Paper Details

Date Published: 5 April 2011
PDF: 8 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690P (5 April 2011); doi: 10.1117/12.879305
Show Author Affiliations
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Hiroyuki Kondo, Nikon Corp. (Japan)
Hiroshi Chiba, Nikon Corp. (Japan)
Kazushi Nomura, Nikon Corp. (Japan)
Hidemi Kawai, Nikon Corp. (Japan)
Yoshiaki Kohama, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Yukiharu Ohkubo, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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