Extreme ultraviolet (EUV) lithography is one of the most promising technologies for achieving 22nm HP lithography and beyond. EUV resist is required to improve resolution limit down to less than 20nm hp. To achieve such a performance, innovative materials' development is necessary under ultra-thin resist film condition for preventing line collapse. In addition, more refined etching processes compatible with ultra-thin resist film are needed. In this study, we will report our several approaches for both materials and processes towards forming less than 20nm HP pattern under ultra-thin film condition. We will also introduce our tri-layer system formed with combination of Si-ARC stack and organic hard mask (OHM) stack for refined etching process.

Date Published: 15 April 2011
PDF: 7 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721I (15 April 2011); doi: 10.1117/12.879303

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)