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Proceedings Paper

Study of various RET for process margin improvement in 3Xnm DRAM contact
Author(s): Hak-Yong Sim; Hyoung-Soon Yune; Yeong-Bae Ahn; James Moon; Byoung-Sub Nam; Donggyu Yim; Sung-Ki Park
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Paper Abstract

As the DRAM node shrinks down to its natural limit, photo lithography is encountering many difficulties. 3Xnm DRAM node seems to be the limit for ArF Immersion. Until the arrival of EUV, double patterning (DPT) or spacer double patterning (SPT) seems like the next solution. But the problem with DPT or SPT is that both increases process step their by increasing the final costs of the device. So limiting the use of DPT or SPT is very important for device fabrication. For 3Xnm DRAM, storage node is one of the candidates to eliminate DPT or SPT process. But this method may cost lower process margin and degradation of pattern image. So, solution to these problems is very crucial. In this study, we will realize storage node (SN) pattern for 3Xnm DRAM node with improved process margin. First we will discuss selection of illumination for optimal condition second, correction of the mask will be introduced. We will also talk about the usage of various RET such as model based assist feature. Value such as DOF, EL and CDU (critical dimension uniformity) will be evaluated and analyzed.

Paper Details

Date Published: 22 March 2011
PDF: 6 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732N (22 March 2011); doi: 10.1117/12.879206
Show Author Affiliations
Hak-Yong Sim, Hynix Semiconductor Inc. (Korea, Republic of)
Hyoung-Soon Yune, Hynix Semiconductor Inc. (Korea, Republic of)
Yeong-Bae Ahn, Hynix Semiconductor Inc. (Korea, Republic of)
James Moon, Hynix Semiconductor Inc. (Korea, Republic of)
Byoung-Sub Nam, Hynix Semiconductor Inc. (Korea, Republic of)
Donggyu Yim, Hynix Semiconductor Inc. (Korea, Republic of)
Sung-Ki Park, Hynix Semiconductor Inc. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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