Proceedings Paper
Application of mask process correction (MPC) to monitor and correct mask process drift| Format | Member Price | Non-Member Price |
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Paper Abstract
Temporal drift in the mask manufacturing process has been observed in CD measurements collected at different times.
Most of this is corrected through global sizing and dose adjustments resulting in small mean-to-target (MTT) residual
errors. However, this procedure does not account for a detectable change in the proximity behavior of the mask
process. This paper discusses a procedure for detecting and monitoring the proximity behavior of a process using an
targeted sampling plan. It also proposes a procedure to correct for drifts in proximity behavior if it is predictable and
systematic.
Paper Details
Date Published: 28 March 2011
PDF: 7 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797107 (28 March 2011); doi: 10.1117/12.879119
Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)
PDF: 7 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797107 (28 March 2011); doi: 10.1117/12.879119
Show Author Affiliations
Timothy Lin, Mentor Graphics Corp. (United States)
Tom Donnelly, Mentor Graphics Corp. (United States)
Gordon Russell, Mentor Graphics Corp. (United States)
Tom Donnelly, Mentor Graphics Corp. (United States)
Gordon Russell, Mentor Graphics Corp. (United States)
Sunwook Jung, Mentor Korea Co., Ltd. (Korea, Republic of)
Jiyoung Jeong, Mentor Korea Co., Ltd. (Korea, Republic of)
Jiyoung Jeong, Mentor Korea Co., Ltd. (Korea, Republic of)
Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)
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