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Proceedings Paper

EUV negative-resist based on thiol-yne system
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani
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Paper Abstract

Non-conventional chemically amplified (CA) negative resist for EUV lithography was studied. We have designed negative-tone EUV resist based on thiol-yne stepwise radical reactions. OH groups of poly(4-hydroxystyrene) (PHS) were modified with functional units bearing C-C triple bond structure. Resist was formulated as a mixture of modified-PHS, multifunctional thiol compound, and photoradical generator. The present resist was developable with standard 2.38 wt% TMAH aq. solution. Photo-sensitivity of the resist was obtained on irradiation at 254 nm and 13.5 nm. The resist was highly sensitive to EUV exposure. The sensitivity and the contrast were affected by the structure of modified-PHS and process conditions.

Paper Details

Date Published: 15 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721E (15 April 2011); doi: 10.1117/12.879037
Show Author Affiliations
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Koichi Maki, Osaka Prefecture Univ. (Japan)
Haruyuki Okamura, Osaka Prefecture Univ. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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