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Proceedings Paper

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development
Author(s): Makoto Muramatsu; Mitsuaki Iwashita; Takahiro Kitano; Takayuki Toshima; Yuriko Seino; Daisuke Kawamura; Masahiro Kanno; Katsutoshi Kobayashi; Tsukasa Azuma
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Paper Abstract

We report wet development technique for directed self-assembly lithography pattern. For typical diblock copolymer, poly (styrene-block-methyl methacrylate) (PS-b-PMMA), the PMMA area is removed by O2 plasma. However, O2 plasma attack also etches off PS area simultaneously. As a result, the thickness of residual PS pattern is thinner and it causes degradation of PS mask performance. PS thickness loss in the device integration is not desirable as etching mask role. In this work, we applied wet development technique which could be higher selectivity to keep PS film thickness after pattern formation. Especially, we propose the method using low pressure mercury lamp and conventional TMAH (2.38%) as developer. It is expected to accomplish pattern formation in one track with coating, baking, exposure and development.

Paper Details

Date Published: 4 April 2011
PDF: 7 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 79701F (4 April 2011); doi: 10.1117/12.878931
Show Author Affiliations
Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan)
Mitsuaki Iwashita, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Kitano, Tokyo Electron Kyushu Ltd. (Japan)
Takayuki Toshima, Tokyo Electron Kyushu Ltd. (Japan)
Yuriko Seino, Toshiba Corp. (Japan)
Daisuke Kawamura, Toshiba Corp. (Japan)
Masahiro Kanno, Toshiba Corp. (Japan)
Katsutoshi Kobayashi, Toshiba Corp. (Japan)
Tsukasa Azuma, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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