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Proceedings Paper

Development of under layer material for EUV lithography
Author(s): Rikimaru Sakamoto; Bang-Ching Ho; Noriaki Fujitani; Takafumi Endo; Ryuji Ohnishi
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Paper Abstract

For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. For lithography processes, the Line width roughness (LWR) and the pattern collapse of resist are the most critical issues for NGL, because of the small target critical dimension (CD) size and high aspect ratio. In this study, we design the new concept of EUV Under layer (UL) material to meet these requirements and study the impact of polymer design for pattern collapse behavior, pattern profile and LWR control by using EUV exposure tool.

Paper Details

Date Published: 8 April 2011
PDF: 7 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692F (8 April 2011); doi: 10.1117/12.878734
Show Author Affiliations
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
Bang-Ching Ho, Nissan Chemical Industries, Ltd. (Japan)
Noriaki Fujitani, Nissan Chemical Industries, Ltd. (Japan)
Takafumi Endo, Nissan Chemical Industries, Ltd. (Japan)
Ryuji Ohnishi, Nissan Chemical Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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