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Proceedings Paper

Application of flash-lamp post-exposure baking for EUV resist processing
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Paper Abstract

The reduction of linewidth roughness (LWR) is considered one of the most critical issues in extreme ultraviolet (EUV) photoresists. A possible solution to the LWR issue is shortening the acid-diffusion length of the photoacid via the optimized application of post-exposure bake (PEB) processes. In this study, the development and feasibility of the flash-lamp (FL) PEB process as a replacement for the commonly used hot-plate PEB process is investigated. The results indicate that, using the FL PEB process, the acid-diffusion length is controllable and lithographic patterning results are obtained. Further detailed analysis is necessary to optimize this technology for lithographic patterning applications. However, the present results show the potential of FL PEB for applications in EUV photoresist processing.

Paper Details

Date Published: 8 April 2011
PDF: 6 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692D (8 April 2011); doi: 10.1117/12.878429
Show Author Affiliations
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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