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Proceedings Paper

Current spreading effect in vertical GaN/InGaN LEDs
Author(s): Chi-Kang Li; Yuh-Renn Wu
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Paper Abstract

In this paper, we have analyzed and discussed the current spreading effect of the vertical LED depending on different electrode patterns. A fully 2D model by solving drift-diffusion and Poisson equations is used to investigate the current flow paths and radiative recombination region. The conventional vertical LED with and without the transparent conducting layer has been considered to figure out the physical mechanism of the device. With the examination of the separated electrode patterns, we find that the hole current spreading length is the critical factor to influence the lighting region due to its relatively low mobility. The effect of the spacing and geometry of the electrode pattern has been studied in this paper. We will present our work on modeling the different geometric LED device and study the optimized condition for these chips.

Paper Details

Date Published: 3 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392K (3 March 2011); doi: 10.1117/12.877663
Show Author Affiliations
Chi-Kang Li, National Taiwan Univ. (Taiwan)
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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