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Proceedings Paper

Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications
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Paper Abstract

Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.

Paper Details

Date Published: 16 March 2011
PDF: 8 pages
Proc. SPIE 7961, Medical Imaging 2011: Physics of Medical Imaging, 79610V (16 March 2011); doi: 10.1117/12.877592
Show Author Affiliations
Kai Wang, Univ. of Waterloo (Canada)
Thunder Bay Regional Research Institute (Canada)
Mohammad Y. Yazdandoost, Univ. of Waterloo (Canada)
Rasoul Keshavarzi, Univ. of Waterloo (Canada)
Kyung-Wook Shin, Univ. of Waterloo (Canada)
Christos Hristovski, Univ. of Waterloo (Canada)
Shiva Abbaszadeh, Univ. of Waterloo (Canada)
Feng Chen, Univ. of Waterloo (Canada)
Shaikh Hasibul Majid, Univ. of Waterloo (Canada)
Karim S. Karim, Univ. of Waterloo (Canada)

Published in SPIE Proceedings Vol. 7961:
Medical Imaging 2011: Physics of Medical Imaging
Norbert J. Pelc; Ehsan Samei; Robert M. Nishikawa, Editor(s)

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