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Proceedings Paper

Growth of bulk GaN crystal by Na flux method
Author(s): M. Imade; N. Miyoshi; M. Yoshimura; Y. Kitaoka; T. Sasaki; Y. Mori
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Paper Abstract

In this paper, we reported the recent advances in the growth of GaN crystals on GaN templates and spontaneously nucleated GaN seeds by Na flux method. In the growth on GaN templates, it was clarified that the growth mode could be controlled by changing the flux composition. Based on the changes in the growth mode under different flux compositions, a growth sequence that is effective for the growth of thick GaN substrates with a low dislocation density was proposed. In the growth on pyramidal GaN seeds, we investigated the dependence of the growth rate, crystallinity and the growth habit on the flux composition. Results showed that a low Ga composition was preferred to grow high-crystallinity prismatic GaN crystals with a high growth rate. When a spontaneously nucleated GaN seed was used, a bulk GaN crystal with a hexagonal pillar consisting of six m-facets, and its length and diameter were 10 mm and 8 mm, respectively, was obtained. Furthermore, we found that the addition of Ca and Li to Ga-Na melt improved transparency of GaN crystals grown on pyramidal GaN seeds.

Paper Details

Date Published: 2 March 2011
PDF: 8 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793902 (2 March 2011); doi: 10.1117/12.877114
Show Author Affiliations
M. Imade, Osaka Univ. (Japan)
N. Miyoshi, Osaka Univ. (Japan)
M. Yoshimura, Osaka Univ. (Japan)
Y. Kitaoka, Osaka Univ. (Japan)
T. Sasaki, Osaka Univ. (Japan)
Y. Mori, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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