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Proceedings Paper

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
Author(s): Ching-Hsueh Chiu; Da-Wei Lin; Zhen-Yu Li; Shih-Chun Ling; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Wei-Tasi Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki
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Paper Abstract

We present a study of semi-polar (1-101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Paper Details

Date Published: 3 March 2011
PDF: 5 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391X (3 March 2011); doi: 10.1117/12.876656
Show Author Affiliations
Ching-Hsueh Chiu, National Chiao Tung Univ. (Taiwan)
Da-Wei Lin, National Chiao Tung Univ. (Taiwan)
Zhen-Yu Li, National Chiao Tung Univ. (Taiwan)
Shih-Chun Ling, National Chiao Tung Univ. (Taiwan)
Industrial Technology Research Institute (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)
Shing-Chung Wang, National Chiao Tung Univ. (Taiwan)
Wei-Tasi Liao, Industrial Technology Research Institute (Taiwan)
Tomoyuki Tanikawa, Nagoya Univ. (Japan)
Yoshio Honda, Nagoya Univ. (Japan)
Masahito Yamaguchi, Nagoya Univ. (Japan)
Nobuhiko Sawaki, Aichi Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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