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Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition
Author(s): Hsien-Yu Lin; Hsueh-Hsing Liu; Chen-Zi Liao; Jen-Inn Chyi
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Paper Abstract

This paper reports a novel selective growth method for growing crack-free semi-polar (1-101) GaN on 7°-off (001) Si substrates by adding SiO2 stripes in perpendicular to the V-grooves on Si. This method can effectively reduce the thermal stress between GaN and Si substrate so that crack-free (1-101) GaN films as thick as 1 μm is achieved after coalescence even without an AlN interlayer. Cathodoluminescence measurements show the presence of low dislocation density areas, which can be attributed to the bending of dislocations toward to the [1-100] and [11-20] directions during the facet growth.

Paper Details

Date Published: 3 March 2011
PDF: 5 pages
Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392H (3 March 2011); doi: 10.1117/12.876356
Show Author Affiliations
Hsien-Yu Lin, National Central Univ. (Taiwan)
Hsueh-Hsing Liu, National Central Univ. (Taiwan)
Chen-Zi Liao, Industrial Technology Research Institute (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Research Ctr. for Applied Sciences (Taiwan)

Published in SPIE Proceedings Vol. 7939:
Gallium Nitride Materials and Devices VI
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon, Editor(s)

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