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Proceedings Paper

Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering
Author(s): Nelson Tansu; Hongping Zhao; Jing Zhang; Guangyu Liu; Xiao-Hang Li; Yik-Khoon Ee; Renbo Song; Takahiro Toma; Le Zhao; G. S. Huang
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Paper Abstract

The challenges and approaches for high-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) are presented. The studies include designs, growths, and device characteristics of 1) InGaN-based QWs LEDs with enhanced matrix element for realizing green-emitting LEDs with high internal quantum efficiency, and 2) InGaN QW LEDs device structure with lattice-matched AlInN-barrier to suppress efficiency-droop in nitride LEDs. Other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) surface plasmon LEDs, 2) new growth approach for dislocation density reduction in GaN, and 3) novel approaches for light extraction efficiency improvement of III-Nitride LEDs.

Paper Details

Date Published: 10 February 2011
PDF: 9 pages
Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 795418 (10 February 2011); doi: 10.1117/12.875901
Show Author Affiliations
Nelson Tansu, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Jing Zhang, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Xiao-Hang Li, Lehigh Univ. (United States)
Yik-Khoon Ee, Lehigh Univ. (United States)
Renbo Song, Lehigh Univ. (United States)
Takahiro Toma, Lehigh Univ. (United States)
Le Zhao, Lehigh Univ. (United States)
G. S. Huang, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7954:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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