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Proceedings Paper

Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets
Author(s): C. Kölper; M. Sabathil; B. Witzigmann; F. Römer; W. Bergbauer; M. Strassburg
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Paper Abstract

We present a systematic analysis of the optical properties of GaN nanorods (NRs) for the application in Light Emitting Diodes (LEDs). Our focus is on NR emitters incorporating active layers in the form of quantum-disc or core-shell geometries. We concentrate on the properties of individual NRs, neglecting any coupling with neighbouring NRs or ensemble effects. The distribution of power among guided and radiative modes as well as Purcell enhancement is discussed in detail in the context of different NR geometries, materials and the presence of interfaces.

Paper Details

Date Published: 21 February 2011
PDF: 9 pages
Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793314 (21 February 2011); doi: 10.1117/12.874984
Show Author Affiliations
C. Kölper, OSRAM Opto Semiconductors GmbH (Germany)
Univ. Kassel (Germany)
M. Sabathil, OSRAM Opto Semiconductors GmbH (Germany)
B. Witzigmann, Univ. Kassel (Germany)
F. Römer, Univ. Kassel (Germany)
W. Bergbauer, OSRAM Opto Semiconductors GmbH (Germany)
M. Strassburg, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 7933:
Physics and Simulation of Optoelectronic Devices XIX
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Alexandre Freundlich, Editor(s)

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