
Proceedings Paper
Experimental characterization of afterpulsing and timing jitter of InGaAs/InP SPADFormat | Member Price | Non-Member Price |
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Paper Abstract
We present the characterization results on a recent generation of InGaAs/InP Single-Photon Avalanche Diodes (SPADs)
operating up to 1700 nm. The improved performance makes them very promising for many NIR single-photon counting
applications since they show low dark count rate, good photon detection efficiency and quite low timing jitter.
First we characterized an important drawback of InGaAs/InP SPAD, namely afterpulsing: traps in the InP high-field
region capture carriers during the avalanche current flow and release them with delay, thus triggering another avalanche
and generating additional noise. Using the double pulse method, we measured the afterpulsing probability as a function
of time delay from the avalanche triggering. We carried out measurements at different temperatures and at different
excess bias in order to find the best operating conditions. Moreover, we biased the detector at different voltage levels
during the OFF period, so as to change the electric field during the de-trapping period in order to study how it affects the
carrier release. Then we characterized SPAD timing jitter, that leads to the time spread between photon absorption and
avalanche detection. We measured timing jitter with focused and un-focused light in order to determine the effects of
light absorption position on jitter.
Paper Details
Date Published: 23 February 2011
PDF: 8 pages
Proc. SPIE 7934, Optical Components and Materials VIII, 79340L (23 February 2011); doi: 10.1117/12.874811
Published in SPIE Proceedings Vol. 7934:
Optical Components and Materials VIII
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)
PDF: 8 pages
Proc. SPIE 7934, Optical Components and Materials VIII, 79340L (23 February 2011); doi: 10.1117/12.874811
Show Author Affiliations
F. Acerbi, Politecnico di Milano (Italy)
A. Tosi, Politecnico di Milano (Italy)
A. Dalla Mora, Politecnico di Milano (Italy)
A. Tosi, Politecnico di Milano (Italy)
A. Dalla Mora, Politecnico di Milano (Italy)
Published in SPIE Proceedings Vol. 7934:
Optical Components and Materials VIII
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)
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