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Proceedings Paper

Broadband semiconductor terahertz laser based on heterogeneous cascades
Author(s): Dana Turcinková; Giacomo Scalari; Maria I. Amanti; Fabrizio Castellano; Mattias Beck; James Lloyd-Hughes; Jérôme Faist
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Paper Abstract

We present a development of a broad gain heterogeneous quantum cascade laser for terahertz frequencies. By placing appropriate different active-regions based on a four-quantum-well design into a double-metal waveguide we obtained laser emitting gapless over a bandwidth of 1 THz, between 3.2 to 2.2 THz. This means that this single-device source covers an emission range of nearly 40 % around the center frequency. In pulsed mode operation, our devices show threshold current density as low as 285 A/cm2 and they operate up to 125 K. We also report on continuous wave measurements.

Paper Details

Date Published: 16 February 2011
PDF: 9 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79530P (16 February 2011); doi: 10.1117/12.874600
Show Author Affiliations
Dana Turcinková, ETH Zurich (Switzerland)
Giacomo Scalari, ETH Zurich (Switzerland)
Maria I. Amanti, ETH Zurich (Switzerland)
Fabrizio Castellano, ETH Zurich (Switzerland)
Mattias Beck, ETH Zurich (Switzerland)
James Lloyd-Hughes, ETH Zurich (Switzerland)
Jérôme Faist, ETH Zurich (Switzerland)

Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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