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Proceedings Paper

New developments of high-power single emitters and laser bars at JENOPTIK
Author(s): M. Zorn; R. Hülsewede; H. Schulze; J. Sebastian; D. Schröder; P. Hennig
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Paper Abstract

High-power single emitters and laser bars find several growing industrial applications such as materials processing. A steady increase in efficiency and output power is needed to conquer new markets. The development of high-end diode lasers usually starts with the development of the epitaxial structure. Therefore, simulations have been performed before the optimized layer structures have been tested using broad area (BA) lasers. Single emitter laser diodes are needed for fiber coupling with a minimal loss of light. We developed such emitters with high output powers at a small far field angle showing output powers of more than 20 W around 940 nm. The high-quality laser bars available at JENOPTIK have been improved and extended to new wavelength ranges. At the lower end, laser bars have been developed around and below 800 nm. At the higher end, design parameters have been optimized for 1060 nm emission wavelength.

Paper Details

Date Published: 21 February 2011
PDF: 8 pages
Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 79180S (21 February 2011); doi: 10.1117/12.874454
Show Author Affiliations
M. Zorn, JENOPTIK Diode Lab GmbH (Germany)
R. Hülsewede, JENOPTIK Diode Lab GmbH (Germany)
H. Schulze, JENOPTIK Diode Lab GmbH (Germany)
J. Sebastian, JENOPTIK Diode Lab GmbH (Germany)
D. Schröder, JENOPTIK Laser GmbH (Germany)
P. Hennig, JENOPTIK Laser GmbH (Germany)


Published in SPIE Proceedings Vol. 7918:
High-Power Diode Laser Technology and Applications IX
Mark S. Zediker, Editor(s)

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