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Proceedings Paper

Variation of optical properties by the crystalline phase transition of polycrystalline silicon
Author(s): Hidenori Iwata; Tomohiro Kita; Hirohito Yamada
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Paper Abstract

We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

Paper Details

Date Published: 17 January 2011
PDF: 6 pages
Proc. SPIE 7943, Silicon Photonics VI, 79431F (17 January 2011); doi: 10.1117/12.874435
Show Author Affiliations
Hidenori Iwata, Tohoku Univ. (Japan)
Tomohiro Kita, Tohoku Univ. (Japan)
Hirohito Yamada, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 7943:
Silicon Photonics VI
Joel A. Kubby; Graham T. Reed, Editor(s)

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