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Proceedings Paper

Power scaling of the MIXSEL: an integrated picosecond semiconductor laser with >6 W average power
Author(s): T. Südmeyer
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Paper Abstract

Semiconductor lasers have the potential to drastically reduce complexity and cost of high power ultrafast lasers. Optically-pumped VECSELs achieved >20 W cw-power in fundamental transverse mode. Passive modelocking with a SESAM enabled 2.1-W average power, sub-100 fs duration, and 50-GHz repetition rate. In 2007, the integration of both elements was demonstrated, the MIXSEL (modelocked integrated external-cavity surface-emitting laser). Here we present a novel MIXSEL design based on a low-saturation fluence quantum dot (QD) absorber layer in an antiresonant structure. Improved thermal management with a CVD-diamond enabled a >30-fold power increase to 6.4 W, higher than any other ultrafast semiconductor laser.

Paper Details

Date Published: 21 February 2011
PDF: 7 pages
Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190R (21 February 2011); doi: 10.1117/12.874184
Show Author Affiliations
T. Südmeyer, ETH Zurich (Switzerland)

Published in SPIE Proceedings Vol. 7919:
Vertical External Cavity Surface Emitting Lasers (VECSELs)
Ursula Keller, Editor(s)

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