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Proceedings Paper

Influence of Li implantation on the optical and electrical properties of ZnO film
Author(s): Saurabh Nagar; Bhavesh Sinha; Arjun Mandal; S. K. Gupta; Subhananda Chakrabarti
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Paper Abstract

ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnObased devices. In an attempt to make it p-type we have studied Li-implanted (Energy=40keV, dose=5x1013cm-2) <002> ZnO films grown over <001> sapphire substrates by Pulsed Laser Deposition technique at 400°C (sample A). The samples were subsequently subjected to Rapid Thermal Annealing at 650° and 750°C (samples B and C) for 30 seconds. Room temperature Photoluminescence study of as-deposited sample reveal consistent Donor-bound exciton (D0X) peak at 3.3eV, which shifts to 3.298eV, 3.298eV, and 3.289eV for samples A, B and C respectively. This data validates the n-type conductivity of the samples with a carrier concentration and Hall mobility of 8.68x1019cm-3, 1.13x1019cm-3 and 2.9x1020cm-3 and 2.14cm2/V-sec, 35.2cm2/V-sec, 16.9cm2/V-sec for samples A, B and C respectively. The reduced energy of D0X peak is probably due to strain variations occurred during the various processing steps. While the higher carrier concentration in sample C can be attributed to aggregated vacancy clusters at high temperature annealing. Since Li acts as an acceptor for ZnO, so a free electron-acceptor (FA) peak at 3.227eV, 3.217eV and 3.225eV in samples A, B and C is evident. A third peak at 3.128eV may be due to the donor-acceptor pair, a reason for a lower energy FA peak for sample B.

Paper Details

Date Published: 14 March 2011
PDF: 7 pages
Proc. SPIE 7940, Oxide-based Materials and Devices II, 79401E (14 March 2011); doi: 10.1117/12.874054
Show Author Affiliations
Saurabh Nagar, Indian Institute of Technology Bombay (India)
Bhavesh Sinha, Indian Institute of Technology Bombay (India)
Arjun Mandal, Indian Institute of Technology Bombay (India)
S. K. Gupta, Bhabha Atomic Research Ctr. (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 7940:
Oxide-based Materials and Devices II
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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