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Proceedings Paper

Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth
Author(s): Thomas Henning Loeber; Dirk Hoffmann; Henning Fouckhardt
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Paper Abstract

GaSb quantum dots (QDs) have been grown epitaxially on GaAs in the Stranski-Krastanov (SK) mode. By variation of the Sb/Ga-V/III flux ratio, the growth temperature, and the nominal coverage the QD dimensions and optoelectronic characteristics can be tuned. These modifications enable dense lying dots with a density up to 9.8 x 1010 cm-2. The position of the photoluminescence (PL) peak can be varied between 0.850 and 1.378 μm by precise control of growth parameters. To raise the PL intensity and QD laser output power samples with a stack of GaSb QD layers are grown on GaAs wafer. A GaSb-QD-laser with a 8-fold stack and an emission wavelength around 0.900 μm is realized with a differential quantum efficiency of 54%.

Paper Details

Date Published: 1 March 2011
PDF: 10 pages
Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470N (1 March 2011); doi: 10.1117/12.873537
Show Author Affiliations
Thomas Henning Loeber, Kaiserslautern Univ. of Technology (Germany)
Dirk Hoffmann, Kaiserslautern Univ. of Technology (Germany)
Henning Fouckhardt, Kaiserslautern Univ. of Technology (Germany)

Published in SPIE Proceedings Vol. 7947:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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