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Proceedings Paper

High-brightness distributed-Bragg-reflector tapered diode lasers: pushing your application to the next level
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Paper Abstract

We demonstrate monolithic distributed-Bragg-reflector tapered diode lasers having an output power up to 12 W, a small spectral width of below ▵λ<10 pm and a beam quality close to the diffraction limit. This results in a brightness close to 1 GWcm-2sr-1. Due to these excellent electro-optical characteristics we achieved visible laser light up to P=1.8 W in a single-path second harmonic generation experiment. This allowed us to develop compact Watt-class (P=1.1 W) visible laser modules having an excellent beam quality (M²<3) with a narrow spectrum (▵λ<30 pm). The entire device is integrated on a micro-optical bench with a volume below 20 cm³. In another application we demonstrate for the first time a femtosecond gigahertz SESAM-modelocked Yb:KGW laser. Such a laser system benefits from the small spectral emission and the focusability of the developed diode laser. A record peak power of 3.9 kW was achived. At the repetition rate of 1 GHz, 281 fs pulses with an average output power of 1.1 W were generated. This Yb:KGW laser has a high potential for stable frequency comb generation.

Paper Details

Date Published: 21 February 2011
PDF: 9 pages
Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 79180R (21 February 2011); doi: 10.1117/12.873362
Show Author Affiliations
C. Fiebig, Ferdinand-Braun-Institut (Germany)
S. Pekarek, ETH Zurich (Switzerland)
K. Paschke, Ferdinand-Braun-Institut (Germany)
M. Uebernickel, Ferdinand-Braun-Institut (Germany)
T. Südmeyer, ETH Zurich (Switzerland)
U. Keller, ETH Zurich (Switzerland)
G. Erbert, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 7918:
High-Power Diode Laser Technology and Applications IX
Mark S. Zediker, Editor(s)

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