Advanced 3D CAD and optical simulation software were used to design first iteration on-CMOS chip MOEMS micro-systems. A Si Avalanche-based LED and an array of detectors interface laterally with a single arm canti-lever system, all to be fabricated with CMOS technology. Silicon nitride wave-guides are used as optical propagation channels offering losses of lower than 1dB.cm^-1. Micro-bending and multi-planing of the wave guiding is possible. Far-field manipulation of the emitted channel radiation is possible. Mechanically designed and sensor systems can be added by means of CMOS post processing techniques. The emission level of the Si CMOS Av LEDs is 10⁺³ higher than the detectivity of silicon p-i-n detectors, offering good dynamic range in detection and data analyses. The mature processing characteristics of CMOS technology offers high integration possibilities and low cost manufacturing of the designed systems.

Date Published: 14 February 2011
PDF: 11 pages
Proc. SPIE 7930, MOEMS and Miniaturized Systems X, 79300Z (14 February 2011); doi: 10.1117/12.873353

Published in SPIE Proceedings Vol. 7930:
MOEMS and Miniaturized Systems X
Harald Schenk; Wibool Piyawattanametha, Editor(s)