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Proceedings Paper

Lateral diffusion of minority carriers in InAsSb-based nBn detectors
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Paper Abstract

We report on the investigation of lateral diffusion of minority carriers in InAsSb based photodetectors with the nBn design. Diffusion lengths (DL) were extracted from temperature dependent I-V measurements. The behavior of DL as a function of applied bias, temperature, and composition of the barrier layer was investigated. The obtained results suggest that lateral diffusion of minority carriers is not the limiting factor for InAsSb based nBn MWIR detector performance at high temperatures (> 200K). The detector with an As mole fraction of 10% in the barrier layer has demonstrated values of DL as low as 7 μm (Vb = 0.05V) at 240K.

Paper Details

Date Published: 24 January 2011
PDF: 8 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451R (24 January 2011);
Show Author Affiliations
Elena A. Plis, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
S. Myers, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
M. N. Kutty, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
J. Mailfert, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
National Institute of Applied Sciences (France)
E. P. Smith, Raytheon Vision Systems (United States)
S. Johnson, Raytheon Vision Systems (United States)
S. Krishna, National Institute of Applied Sciences (France)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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