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Proceedings Paper

Study on photodoping properties for the multilayered films GeS2/Ag/GeS2 and Ag/GeS2/Ag
Author(s): Yoshihisa Murakami; Takahiro Iijima; Moriaki Wakaki
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Paper Abstract

The photodoping phenomenon was found by Kostyshin in Russia in 1965. Many researches have carried out studying on the photodoping phenomenon of Ag /a-As2S3 system, and various interesting behaviors have been reported. However, there are few works on the research of the photodoping phenomenon of Ag /a-GeS2 double layer system. It was reported that the lateral diffusion was small at the photodoping phenomenon of Ag /a-GeS2 system compared with the Ag /a- As2S3 system. Therefore, the feasibility of application for fine patterning is expected for the Ag /a-GeS2 system. In general, a light beam with the photon energy near the optical gap energy (ca. 3.3eV) of a-GeS2 is irradiated to cause photodoping. In this study, the photodoping characteristics of multilayer films, GeS2/Ag/GeS2 and Ag/GeS2/Ag, were fabricated and characterized. The photodoping characteristics are compared with the conventional two layer films. In the GeS2/Ag/GeS2 three layered system, strong selectivity of photodoping property relating with the incident light wavelength was found. The feasibility to apply three layered films to optical memories and waveguides were suggested.

Paper Details

Date Published: 23 February 2011
PDF: 7 pages
Proc. SPIE 7934, Optical Components and Materials VIII, 793412 (23 February 2011); doi: 10.1117/12.873269
Show Author Affiliations
Yoshihisa Murakami, Tokai Univ. (Japan)
Tsukuba Univ. (Japan)
Takahiro Iijima, Tokai Univ. (Japan)
Moriaki Wakaki, Tokai Univ. (Japan)

Published in SPIE Proceedings Vol. 7934:
Optical Components and Materials VIII
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)

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