
Proceedings Paper
Tailoring the wavelength of semiconductor disk lasersFormat | Member Price | Non-Member Price |
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$17.00 | $21.00 |
Paper Abstract
Optically-pumped semiconductor disk lasers (SDLs) represent a proven approach for generation of multi-watt output
powers with excellent beam quality [1-6]. They combine many advantages of solid-state lasers with the added benefit of
wavelength tailoring provided by the semiconductor gain material. During the past few years a wafer fusion technique
has been used extensively in the producing of vertical-cavity surface-emitting lasers operating at the telecom
wavelengths of 1.3 - 1.55 μm. This technique allows the integration of non-lattice-matched semiconductor materials, e.g.
GaAs and InP, which cannot be grown monolithically. Here we describe the first wafer fused SDLs operating at the
wavelength of 1.3 and 1.57 μm in both continuous-wave and mode-locked regimes.
The quantum dot semiconductors provide an interesting alternative to quantum-well (QW) structures since these
materials alleviate the requirement for lattice matching. Recently, we have demonstrated first quantum dot based gain
medium in SDL architecture. Since then, different wavelengths have been demonstrated both in continuous-wave and
mode-locked regimes with a performance comparable to quantum-well-based lasers. The (AlGaIn)(AsSb) material
system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range. Latticematched
or strain-compensated structures employing InGaAsSb as an active material and AlGaAsSb for barrier and
cladding layers grown on GaSb substrates are demonstrated to be compounds of choice for long-wavelength lasers and
photodetectors. In this study we report an optically-pumped semiconductor disk laser emitting radiation around 2.5 μm
tunable over 130 nm. To our knowledge, this is the widest spectral range reported to date at this wavelength.
Paper Details
Date Published: 21 February 2011
PDF: 17 pages
Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190U (21 February 2011); doi: 10.1117/12.873167
Published in SPIE Proceedings Vol. 7919:
Vertical External Cavity Surface Emitting Lasers (VECSELs)
Ursula Keller, Editor(s)
PDF: 17 pages
Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190U (21 February 2011); doi: 10.1117/12.873167
Show Author Affiliations
Oleg G. Okhotnikov, Tampere Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 7919:
Vertical External Cavity Surface Emitting Lasers (VECSELs)
Ursula Keller, Editor(s)
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