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Proceedings Paper

Analytical modeling of graphene nanoribbon Schottky diodes
Author(s): Alireza Kargar; Deli Wang
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Paper Abstract

This paper presents graphene nanoribbon (GNR) Schottky diode through an analytical approach. To achieve an analytical relation for channel current, first an analytical equation for potential distribution within the GNR is offered. Then by using the WKB approximation, transmission probability through Schottky barriers is derived. Finally the channel current is analytically achieved, which is a function of physical and electrical parameters including gate insulator thickness, Schottky barrier height, drain bias voltage, gate bias voltage, GNR width, and subband number. To get a rectification behavior of presented device, two different metals have been considered at the two ends of a p-type semiconducting GNR resulting in asymmetric contacts. The effect of different parameters such as gate bias voltage, GNR width, and contact metals on the rectification behavior is investigated. We demonstrate that the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage can be tuned through the use of these parameters. The derived analytical current well describes the rectifying behavior of presented GNR Schottky diode.

Paper Details

Date Published: 24 August 2010
PDF: 8 pages
Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 77610U (24 August 2010); doi: 10.1117/12.871883
Show Author Affiliations
Alireza Kargar, Univ. of California, San Diego (United States)
Deli Wang, Univ. of California, San Diego (United States)

Published in SPIE Proceedings Vol. 7761:
Carbon Nanotubes, Graphene, and Associated Devices III
Didier Pribat; Young-Hee Lee; Manijeh Razeghi, Editor(s)

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