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Proceedings Paper

GaSb and InP-based VCSELs at 2.3 μm emission wavelength for tuneable diode laser spectroscopy of carbon monoxide
Author(s): M. Ortsiefer; C. Neumeyr; J. Rosskopf; S. Arafin; G. Böhm; A. Hangauer; J. Chen; R. Strzoda; M.-C. Amann
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Paper Abstract

We present long-wavelength buried tunnel junction (BTJ) VCSELs for emission wavelengths around 2.3 μm. Two different device concepts have been realized utilizing either InP- or GaSb-based materials. The InP-VCSELs are based on a BTJ-design which has been well-proven for wavelengths up to 2 μm in recent years. To extend this range up to emission wavelengths around 2.3 μm, the main focus is set on an optimization of the active region. In this context, we use a graded and heavily strained quantum well design in conjunction with optimized growth conditions. The photoluminescence and x-ray characterization shows a very good material quality. Room-temperature operated VCSELs exhibit around 0.5 mW of output power with singlemode-emission at 2.36 μm representing the longest wavelength that has been achieved with InP-based interband lasers so far. GaSb-based devices comprise an epitaxial back mirror and a dielectric output mirror while the basic BTJ-principle is maintained. Using GaInAsSb quantum wells, the active region reveals excellent gain characteristics at 2.3 μm. Singlemode VCSELs show room temperature threshold currents around 1 mA and output powers of 0.7 mW, respectively. Both laser types have been implemented in a tuneable diode laser spectroscopy (TDLS) setup to evaluate their capability for sensing of carbon monoxide. Using an absorption path length of only 10 cm, concentration measurements down to a few ppm have been successfully demonstrated.

Paper Details

Date Published: 24 January 2011
PDF: 7 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794509 (24 January 2011); doi: 10.1117/12.871561
Show Author Affiliations
M. Ortsiefer, VERTILAS GmbH (Germany)
C. Neumeyr, VERTILAS GmbH (Germany)
J. Rosskopf, VERTILAS GmbH (Germany)
S. Arafin, Walter Schottky Institut (Germany)
G. Böhm, Walter Schottky Institut (Germany)
A. Hangauer, Walter Schottky Institut (Germany)
SIEMENS AG (Germany)
J. Chen, Walter Schottky Institut (Germany)
SIEMENS AG (Germany)
R. Strzoda, Siemens AG (Germany)
M.-C. Amann, Walter Schottky Institut (Germany)

Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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