Proceedings Paper
Optical bistability in electrically coupled SOA-BJT devices| Format | Member Price | Non-Member Price |
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Paper Abstract
A novel optical bistable device based on an electrically coupled semiconductor optical amplifier (SOA) and a bipolar
juncture transistor (BJT) is proposed and experimentally demonstrated. The measured switching time is about 0.9-1.0 us,
mainly limited by the electrical capacitance of the SOA and the parasitic inductance of the electrical connections.
However, the effects of parasitic components can be reduced employing current electronic-photonic integration circuits
(EPIC). Numerical simulations confirm that for capacitance values in tens of femtofarads switching speed can reach tens
of GHz.
Paper Details
Date Published: 14 September 2010
PDF: 6 pages
Proc. SPIE 7750, Photonics North 2010, 77501Q (14 September 2010); doi: 10.1117/12.871552
Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)
PDF: 6 pages
Proc. SPIE 7750, Photonics North 2010, 77501Q (14 September 2010); doi: 10.1117/12.871552
Show Author Affiliations
Pablo A. Costanzo-Caso, Rose-Hulman Institute of Technology (United States)
Ctr. de Investigaciones Ópticas (Argentina)
Yiye Jin, Rose-Hulman Institute of Technology (United States)
Michael Gehl, Rose-Hulman Institute of Technology (United States)
Ctr. de Investigaciones Ópticas (Argentina)
Yiye Jin, Rose-Hulman Institute of Technology (United States)
Michael Gehl, Rose-Hulman Institute of Technology (United States)
Sergio Granieri, Rose-Hulman Institute of Technology (United States)
Azad Siahmakoun, Rose-Hulman Institute of Technology (United States)
Azad Siahmakoun, Rose-Hulman Institute of Technology (United States)
Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)
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