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Proceedings Paper

Fluorescence study of silicon fabricated by nanosecond pulse laser
Author(s): Chunyang Liu; Lidong Sun; Yulan Lu; Xing Fu; Fengming Sun; Peter Zeppenfeld
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Paper Abstract

Some ~20μm wide slots have been fabricated on Si (100) using a homebuilt 355nm nanosecond pulse laser micromachining system. The slots were characterized by fluorescence microscopy, local spectroscopy and scanning electron microscopy. A kind of microstructure like porous silicon was formed in the fabrication zone. Strong photoluminescence emission from the fabricated zone in the wavelength range between 450nm and 700nm has been detected. Furthermore, a strong decay of the PL intensity has been observed as a function of irradiation time for excitation with wavelength between 400nm and 440nm. The analysis of elemental composition in the fabrication zone shows that the fluorescence emission is in relationship with Oxygen distribution and the modified structure.

Paper Details

Date Published: 22 September 2010
PDF: 7 pages
Proc. SPIE 7750, Photonics North 2010, 77501A (22 September 2010); doi: 10.1117/12.871375
Show Author Affiliations
Chunyang Liu, Tianjin Univ. (China)
Lidong Sun, Johannes Kepler Univ. Linz (Austria)
Yulan Lu, Tianjin Univ. (China)
Xing Fu, Tianjin Univ. (China)
Fengming Sun, Tianjin Univ. (China)
Peter Zeppenfeld, Johannes Kepler Univ. Linz (Austria)

Published in SPIE Proceedings Vol. 7750:
Photonics North 2010
Henry P. Schriemer; Rafael N. Kleiman, Editor(s)

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