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Proceedings Paper

Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature
Author(s): Li Fan; Chuanshun Cao; Gerald Thaler; Dustin Nonnemacher; Feliks Lapinski; Irene Ai; Brian Caliva; Suhit Das; Robert Walker; Linfei Zeng; Mark McElhinney; Prabhu Thiagarajan
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Paper Abstract

We report on the high-power high-temperature long-pulse performance of the 8XX-nm diode laser bars and arrays, which were recently developed at Lasertel Inc. for diode laser pumping within high-temperature (130 °C) environment without any cooling. Since certain energy in each pulse is required, the diode laser bars have to provide both high peak power and a nice pulse shape at 130 °C. Optimizing the epi-structure of the diode laser, the laser cavity and the distribution of waste heat, we demonstrate over 40-millisecond long-pulse operation of the 8XX-nm CS bars at 130 °C and 100 A. Pumping the bar with 5-Hz frequency 15-millisecond rectangular current pulses, we generate over 60 W peak power at 100 A and 130 °C. During the pulse duration, the pulse shape of the CS bars is well-maintained and the power almost linearly decays with a rate of 1.9% peak power per millisecond at 130 °C and 100 A. Regardless of the pulse shape, this laser bar can lase at very high temperature and output pulse can last for 8 ms/2ms at 170 °C/180 °C (both driven by 60 A current pulses with 5-Hz frequency, 10 millisecond pulse width), respectively. To the best of our knowledge, this is the highest operating temperature for a long-pulse 8XX-nm laser bar. Under the condition of 130 °C and 100 A, the laser bars do not show any degradation after 310,000 10-millisecond current pulse shots. The performance of stack arrays at 130 °C and 100 A are also presented. The development of reliable high-temperature diode laser bar paves the way for diode laser long-pulse pumping within a high-temperature environment without any cooling.

Paper Details

Date Published: 21 February 2011
PDF: 7 pages
Proc. SPIE 7918, High-Power Diode Laser Technology and Applications IX, 791805 (21 February 2011); doi: 10.1117/12.871184
Show Author Affiliations
Li Fan, Lasertel, Inc. (United States)
Chuanshun Cao, Lasertel, Inc. (United States)
Gerald Thaler, Lasertel, Inc. (United States)
Dustin Nonnemacher, Lasertel, Inc. (United States)
Feliks Lapinski, Lasertel, Inc. (United States)
Irene Ai, Lasertel, Inc. (United States)
Brian Caliva, Lasertel, Inc. (United States)
Suhit Das, Lasertel, Inc. (United States)
Robert Walker, Lasertel, Inc. (United States)
Linfei Zeng, Lasertel, Inc. (United States)
Mark McElhinney, Lasertel, Inc. (United States)
Prabhu Thiagarajan, Lasertel, Inc. (United States)

Published in SPIE Proceedings Vol. 7918:
High-Power Diode Laser Technology and Applications IX
Mark S. Zediker, Editor(s)

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