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Proceedings Paper

Paving the way to high-quality indium nitride: the effects of pressurized reactor
Author(s): Takashi Matsuoka; Yuhuai Liu; Takeshi Kimura; Yuantao Zhang; Kiattiwut Prasertsuk; Ryuji Katayama
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Paper Abstract

To promote the research on the growth of high-quality InN films attractive to the application for both optical and electronic devices, the pressurized-reactor metalorganic-vapor-phase epitaxy (PR-MOVPE) system which can overcome the high equilibrium-vapor-pressure of nitrogen between solid and vapor phases is originally developed. In addition to this system, the N-polar growth technique developed in the growth of GaN is introduced. As a result, the dense InN films with atomic steps are successfully grown. From the struggle of the research on high quality InN, the subject of the phase purity is also arisen. The pole figure measurements make the growth condition for a pure InN with a wurtzite structure. The phase purity is almost determined by the growth temperature. These results will pave the way to high-quality InN.

Paper Details

Date Published: 24 January 2011
PDF: 5 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794519 (24 January 2011); doi: 10.1117/12.869771
Show Author Affiliations
Takashi Matsuoka, Tohoku Univ. (Japan)
CREST (Japan)
Yuhuai Liu, Tohoku Univ. (Japan)
CREST (Japan)
Takeshi Kimura, Tohoku Univ. (Japan)
Yuantao Zhang, Tohoku Univ. (Japan)
Kiattiwut Prasertsuk, Tohoku Univ. (Japan)
Ryuji Katayama, Tohoku Univ. (Japan)
CREST (Japan)

Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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