Share Email Print

Proceedings Paper

Intracavity second harmonic generation characteristics of semiconductor disk laser
Author(s): Zili Li; Yanrong Song; Peng Zhang; Xiao Zhang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The Optically pumped semiconductor disk laser use the InGaAs/GaAs quantum structures as the gain medium, and optically pumped at 808 nm by the Laser Diode. We have got the fundamental output at 1030 nm, and its highest output power is about 60 mW. Then, in straight cavity, we used LBO, KTP, KNbO3 as second harmonic generation crystal respectively, and obtain the green laser with maximum power of 8 mW. In folding cavity, we employed LBO as second harmonic generation crystal and got the laser at 515 nm with it's maximum power is 11mW. The characteristics of these crystals were discussed. Finally, we simulated the heat distribution of the gain chip by finite-element analysis method, and some measures of improving heat spread and output efficiency of the semiconductor chip.

Paper Details

Date Published: 12 November 2010
PDF: 7 pages
Proc. SPIE 7844, Semiconductor Lasers and Applications IV, 78440M (12 November 2010); doi: 10.1117/12.869391
Show Author Affiliations
Zili Li, Beijing Univ. of Technology (China)
Yanrong Song, Beijing Univ. of Technology (China)
Peng Zhang, Beijing Univ. of Technology (China)
Xiao Zhang, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 7844:
Semiconductor Lasers and Applications IV
Ning-Hua Zhu; Jinmin Li; Farzin Amzajerdian; Hiroyuki Suzuki, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?