Proceedings Paper
Nanosecond laser ablation and deposition of Ge films| Format | Member Price | Non-Member Price |
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Paper Abstract
In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064
nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background
pressure of <10-6 Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The
as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy
(AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties
on laser wavelengths and fluence are discussed.
Paper Details
Date Published: 23 August 2010
PDF: 6 pages
Proc. SPIE 7766, Nanostructured Thin Films III, 776614 (23 August 2010); doi: 10.1117/12.869014
Published in SPIE Proceedings Vol. 7766:
Nanostructured Thin Films III
Raúl J. Martin-Palma; Yi-Jun Jen; Akhlesh Lakhtakia, Editor(s)
PDF: 6 pages
Proc. SPIE 7766, Nanostructured Thin Films III, 776614 (23 August 2010); doi: 10.1117/12.869014
Show Author Affiliations
Seong Shan Yap, Norwegian Univ. of Science and Technology (Norway)
Wee Ong Siew, Multimedia Univ. (Malaysia)
Cécile Ladam, SINTEF (Norway)
Wee Ong Siew, Multimedia Univ. (Malaysia)
Cécile Ladam, SINTEF (Norway)
Øystein Dahl, SINTEF (Norway)
Turid Worren Reenaas, Norwegian Univ. of Science and Technology (Norway)
Teck Yong Tou, Multimedia Univ. (Malaysia)
Turid Worren Reenaas, Norwegian Univ. of Science and Technology (Norway)
Teck Yong Tou, Multimedia Univ. (Malaysia)
Published in SPIE Proceedings Vol. 7766:
Nanostructured Thin Films III
Raúl J. Martin-Palma; Yi-Jun Jen; Akhlesh Lakhtakia, Editor(s)
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