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Proceedings Paper

Nanosecond laser ablation and deposition of Ge films
Author(s): Seong Shan Yap; Wee Ong Siew; Cécile Ladam; Øystein Dahl; Turid Worren Reenaas; Teck Yong Tou
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Paper Abstract

In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background pressure of <10-6 Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties on laser wavelengths and fluence are discussed.

Paper Details

Date Published: 23 August 2010
PDF: 6 pages
Proc. SPIE 7766, Nanostructured Thin Films III, 776614 (23 August 2010); doi: 10.1117/12.869014
Show Author Affiliations
Seong Shan Yap, Norwegian Univ. of Science and Technology (Norway)
Wee Ong Siew, Multimedia Univ. (Malaysia)
Cécile Ladam, SINTEF (Norway)
Øystein Dahl, SINTEF (Norway)
Turid Worren Reenaas, Norwegian Univ. of Science and Technology (Norway)
Teck Yong Tou, Multimedia Univ. (Malaysia)

Published in SPIE Proceedings Vol. 7766:
Nanostructured Thin Films III
Raúl J. Martin-Palma; Yi-Jun Jen; Akhlesh Lakhtakia, Editor(s)

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