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Proceedings Paper

Resist process windows in electron-beam lithography
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Paper Abstract

High resolution sub resolution assist features (SRAFs) are challenging to pattern, especially on photomasks with pattern density variations and beam corrections. This paper presents analysis techniques of SRAF resist resolution performance and manufacturing robustness. Electron beam proximity effects and their correction methods impact aerial image quality. Resist resolution and LER depend strongly on the aerial image, and these effects will be looked at theoretically and experimentally with CDSEM and reflected die-to-die inspection techniques. A quantitative understanding of resolution process latitude is important in SRAF patterning, especially when one considers beam corrections that are used to compensate for effects like electron fogging and etch loading.

Paper Details

Date Published: 24 September 2010
PDF: 11 pages
Proc. SPIE 7823, Photomask Technology 2010, 78230B (24 September 2010); doi: 10.1117/12.868037
Show Author Affiliations
Andrew T. Jamieson, Intel Corp. (United States)
Nathan Wilcox, Intel Corp. (United States)
Wai Y. Kwok, Intel Corp. (United States)
Yong Kwan Kim, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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