Share Email Print
cover

Proceedings Paper

E-beam writing time improvement for inverse lithography technology mask for full-chip
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Inverse Lithography Technology (ILT) is becoming one of the strong candidates for 32nm and below. ILT masks provide significantly better litho performance than traditional OPC masks. To enable ILT for production as one of the leading candidates for low-k1 lithography, one major task to overcome is mask manufacturability including mask data fracturing, MRC constraints, writing time, and inspection. In prior publications[4,5], it has been shown that the Inverse Synthesizer (ISTM) product has the capability to adjust for mask complexity to make it more manufacturable while maintaining the significant litho gains of nearly ideal ILT mask. The production readiness of ILT has been demonstrated at full-chip level. To fully integrate ILT mask into production, a number of areas were investigated to further reduce ILT mask complexity without compromising too much of process window. These areas include flexible controls of SRAF placements with respect to local feature sizes, separate control of Manhattan mask segment length of main and SRAF features, topology based variable segmentation length, and jog alignment. The impact of these approaches on e-beam mask writing time and lithography performance is presented in the paper.

Paper Details

Date Published: 26 May 2010
PDF: 9 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481T (26 May 2010); doi: 10.1117/12.867995
Show Author Affiliations
Guangming Xiao, Luminescent Technologies, Inc. (United States)
Dong Hwan Son, Luminescent Technologies, Inc. (United States)
Tom Cecil, Luminescent Technologies, Inc. (United States)
Dave Irby, Luminescent Technologies, Inc. (United States)
David Kim, Luminescent Technologies, Inc. (United States)
Ki-Ho Baik, Luminescent Technologies, Inc. (United States)
Byung-Gook Kim, Samsung Electronics Co. Ltd. (Korea, Republic of)
SungGon Jung, Samsung Electronics Co. Ltd. (Korea, Republic of)
Sung Soo Suh, Samsung Electronics Co. Ltd. (Korea, Republic of)
HanKu Cho, Samsung Electronics Co. Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

© SPIE. Terms of Use
Back to Top