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Proceedings Paper

Performance and stability of mask process correction for EBM-7000
Author(s): Yasuko Saito; George Chen; Jen-Shiang Wang; Shufeng Bai; Rafael Howell; Jiangwei Li; Jun Tao; Doug VanDenBroeke; Jim Wiley; Tadahiro Takigawa; Takayuki Ohnishi; Takashi Kamikubo; Shigehiro Hara; Hirohito Anze; Yoshiaki Hattori; Shuichi Tamamushi
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Paper Abstract

In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-70001), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm2) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.

Paper Details

Date Published: 26 May 2010
PDF: 10 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774814 (26 May 2010); doi: 10.1117/12.867969
Show Author Affiliations
Yasuko Saito, Brion Technologies KK (Japan)
George Chen, Brion Technologies, Inc. (United States)
Jen-Shiang Wang, Brion Technologies, Inc. (United States)
Shufeng Bai, Brion Technologies, Inc. (United States)
Rafael Howell, Brion Technologies, Inc. (United States)
Jiangwei Li, Brion Technologies, Inc. (United States)
Jun Tao, Brion Technologies, Inc. (United States)
Doug VanDenBroeke, Brion Technologies, Inc. (United States)
Jim Wiley, Brion Technologies, Inc. (United States)
Tadahiro Takigawa, Brion Technologies KK (Japan)
Takayuki Ohnishi, NuFlare Technology, Inc. (Japan)
Takashi Kamikubo, NuFlare Technology, Inc. (Japan)
Shigehiro Hara, NuFlare Technology, Inc. (Japan)
Hirohito Anze, NuFlare Technology, Inc. (Japan)
Yoshiaki Hattori, NuFlare Technology, Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology, Inc. (Japan)

Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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