
Proceedings Paper
Design of optimized quantum well infrared photodetector's structure including higher order effectsFormat | Member Price | Non-Member Price |
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Paper Abstract
Photoconductive GaAs/AlGaAs quantum well infrared photodetector (QWIP) achieves best performance when the well
has its first excited state resonant with barrier height. Optimum QWIP structure parameters can be designed according to
this rule. The parameters calculated by simple square well model taking account of variable effective mass are not
accurate enough and can merely provide a rough estimation for actual QWIP devices. Higher order effects including
band nonparabolicity, quantum confined Stark-effect and Coulomb interaction of large number of charge carriers (also
known as Many-body effect) can have considerable influence on the energy level of quantum wells. Band
nonparabolicity effect was included in the calculation in this paper. And a group of optimized GaAs/AlGaAs n-type
QWIP structure parameters covering wavelength from 7 μm to 16 μm were systematically calculated, using one band
effective mass approximation (EMA) and shooting method. These calculated results were carefully compared with those
where band nonparabolicity was not considered, and 4 ± 2% discrepancy was found. Since a photoconductive QWIP
normally works under a certain bias, change of the confined state energy level and shift of peak wavelength caused by
the quantum confined Stark-effect were calculated and discussed. All the calculated quantum well structure parameters
in this paper will offer a more accurate guide for QWIP fabrication.
Paper Details
Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581U (22 October 2010); doi: 10.1117/12.867691
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581U (22 October 2010); doi: 10.1117/12.867691
Show Author Affiliations
Jupeng Jin, Shanghai Institute of Technical Physics (China)
Chun Lin, Shanghai Institute of Technical Physics (China)
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
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