
Proceedings Paper
The improved method to determine the nucleation region of Si nanoparticles formed during pulsed laser ablationFormat | Member Price | Non-Member Price |
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Paper Abstract
The determination of the nucleation region for Si nanoparticles synthesized by pulsed laser ablation was helpful to find
proper parameter to obtain the high quality nanocrystalline silicon (nc-Si) thin films. A XeCl excimer laser was used to
ablate high-resistively single crystalline Si target under a deposition pressure of 10 Pa. Glass or single crystalline (111)
Si substrates, in parallel with the axial direction of silicon target, were located at a distance of 2.0 cm under the plasma to
collect a series of nc-Si thin films. The Raman spectra, X-ray diffraction spectra (XRD) and Scanning electron
microscopy (SEM) images show that Si nanoparticles deposited in substrates were only formed in the range 0.3~3.0cm
away from the target. In this area, the size of the nanoparticles increased firstly and then reduced, meanwhile, the
distributions for the size of the nanoparticles were also changed. According to the character of the beginning and the
terminus of "nucleation area", combining with the "Horizontal Projectile Motion", the range and position of "nucleation
area" were determination.
Paper Details
Date Published: 6 October 2010
PDF: 5 pages
Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76553C (6 October 2010); doi: 10.1117/12.867055
Published in SPIE Proceedings Vol. 7655:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Yoshiharu Namba; David D. Walker; Shengyi Li, Editor(s)
PDF: 5 pages
Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76553C (6 October 2010); doi: 10.1117/12.867055
Show Author Affiliations
Lizhi Chu, Hebei Univ. (China)
Chao Chen, Hebei Univ. (China)
Xuecheng Ding, Hebei Univ. (China)
Zechao Deng, Hebei Univ. (China)
Hengsheng Zhang, Hebei Univ. (China)
Chao Chen, Hebei Univ. (China)
Xuecheng Ding, Hebei Univ. (China)
Zechao Deng, Hebei Univ. (China)
Hengsheng Zhang, Hebei Univ. (China)
Weihua Liang, Hebei Univ. (China)
Jinzhong Chen, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)
Yinglong Wang, Hebei Univ. (China)
Jinzhong Chen, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)
Yinglong Wang, Hebei Univ. (China)
Published in SPIE Proceedings Vol. 7655:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Yoshiharu Namba; David D. Walker; Shengyi Li, Editor(s)
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