
Proceedings Paper
A full chip MB-SRAF placement using the SRAF guidance mapFormat | Member Price | Non-Member Price |
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Paper Abstract
A fast model-based technique for SRAF placements is proposed in this paper. This technique first constructed an image
pixel map with values presenting the sensitivity of improving process window on the desired pattern. The sensitivity
value was derived based on contrast improvement with a defocus model. Then high value pixels were selected and
constructed to form SRAF with MRC regulations. This technique does not require iterations to produce SRAF and
achieves very fast runtime with simple mask shapes, thus can be used in full-chip productions. We called this technique
the SRAF guidance map, SGM
Paper Details
Date Published: 24 September 2010
PDF: 9 pages
Proc. SPIE 7823, Photomask Technology 2010, 78233Q (24 September 2010); doi: 10.1117/12.866139
Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)
PDF: 9 pages
Proc. SPIE 7823, Photomask Technology 2010, 78233Q (24 September 2010); doi: 10.1117/12.866139
Show Author Affiliations
Min-Chun Tsai, ASML Brion Technologies (United States)
Shigeki Nojima, Toshiba Corp. (Japan)
Masahiro Miyairi, Toshiba Corp. (Japan)
Tatsuo Nishibe, ASML Brion Technologies (Japan)
Been-Der Chen, ASML Brion Technologies (United States)
Shigeki Nojima, Toshiba Corp. (Japan)
Masahiro Miyairi, Toshiba Corp. (Japan)
Tatsuo Nishibe, ASML Brion Technologies (Japan)
Been-Der Chen, ASML Brion Technologies (United States)
Hanying Feng, ASML Brion Technologies (United States)
William Wong, ASML Brion Technologies (United States)
Zhangnan Zhu, ASML Brion Technologies (United States)
Yen-Wen Lu, ASML Brion Technologies (United States)
William Wong, ASML Brion Technologies (United States)
Zhangnan Zhu, ASML Brion Technologies (United States)
Yen-Wen Lu, ASML Brion Technologies (United States)
Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)
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