Proceedings Paper
Infrared activity of crystalline silicon and amorphous silicon| Format | Member Price | Non-Member Price |
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Paper Abstract
The thermo-resistance effect in silicon has been exploited for the fabrication of uncooled infrared detectors. In this paper,
based on the Schrodinger equation of material radiation system and the micro-structure of silicon, the infrared absorption
theory of silicon is analyzed. The results show that the infrared activity of amorphous silicon is more activate than
crystalline silicon because of the fault and long range disorder, and using the impurity B, Li, and H, the infrared activity
of silicon also will be activated.
Paper Details
Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765831 (22 October 2010); doi: 10.1117/12.865943
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765831 (22 October 2010); doi: 10.1117/12.865943
Show Author Affiliations
Shuang Liu, Univ. of Electronic Science and Technology of China (China)
Wei Chen, Univ. of Electronic Science and Technology of China (China)
Jianing Zhang, Univ. of Electronic Science and Technology of China (China)
Wei Chen, Univ. of Electronic Science and Technology of China (China)
Jianing Zhang, Univ. of Electronic Science and Technology of China (China)
Wan Zhou, Univ. of Electronic Science and Technology of China (China)
Pu Zeng, Univ. of Electronic Science and Technology of China (China)
Pu Zeng, Univ. of Electronic Science and Technology of China (China)
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
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