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Proceedings Paper

Single photon emission from nitrogen delta-doped semiconductors
Author(s): Hiroyuki Yaguchi
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Paper Abstract

Isolated isolectronic traps in semiconductors are promising candidates for single-photon emitters because sharp emission lines with well-defined wavelengths are readily obtained. In this work, we study the emission from individual isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen delta (δ)-doped GaAs grown on (001) and (111)A substrates. We have found there is a remarkable difference in the polarization properties of luminescence for between (001) and (111) substrates, and successfully obtained unpolarized single photons by utilizing (111) substrate, which are desirable for the application to quantum cryptography. Unpolarized photons could also be obtained from nitrogen δ- doped GaAs/AlGaAs heterostructures grown on (001) substrates.

Paper Details

Date Published: 24 January 2011
PDF: 8 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79452F (24 January 2011); doi: 10.1117/12.865770
Show Author Affiliations
Hiroyuki Yaguchi, Saitama Univ. (Japan)

Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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